डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK3136 | Silicon N-Channel MOSFET 2SK3136
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) =4.5 mΩ typ.
• Low drive current • 4 V gate drive device can be driven from 5 V source
Outline
RENESAS |
Renesas |
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2SK3136 | N-Channel MOSFET 2SK3136
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-696B (Z) 3rd. Edition February 1999 Features
• Low on-resistance R DS(on) = 4.5 mΩ typ. • Low drive current • 4 V gate drive device |
Hitachi Semiconductor |
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