2SK313 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor 2SK313 FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 450V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.9Ω(Max) @ VGS= 10V ·100% avalan

OEM: Hitachi MOSFET Transistor 2SK312 / K312 Datasheet Datasheet Rev. 2.0 – 09/19 – data without warranty / liability OEM: Hitachi MOSFET Transistor 2SK312 / K312 Datasheet Datasheet Rev. 2.0 – 09/

2SK3130 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3130 Switching Regulator Applications Unit: mm • • • • • • Reverse-recovery time: trr = 85 ns Built-in high-speed fly

2SK3131 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK3131 Chopper Regulator DC−DC Converter and Motor Drive Applications Fast reverse recovery time Low drain−source ON resistan

2SK3132 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK3132 Chopper Regulator DC−DC Converter, and Motor Drive Applications l Low drain−source ON resistance l High forward transf

2SK3133(L),2SK3133(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-720 (Z) Target Specification 1st. Edition February 1999 Features • Low on-resistance R DS(on) = 7 mΩ typ. • Low drive cu

2SK3133(L),2SK3133(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-720 (Z) Target Specification 1st. Edition February 1999 Features • Low on-resistance R DS(on) = 7 mΩ typ. • Low drive cu