2SK312 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor 2SK312 FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.9Ω(Max) @ VGS= 10V ·100% avalan

OEM: Hitachi MOSFET Transistor 2SK312 / K312 Datasheet Datasheet Rev. 2.0 – 09/19 – data without warranty / liability OEM: Hitachi MOSFET Transistor 2SK312 / K312 Datasheet Datasheet Rev. 2.0 – 09/

Ordering number:ENN6103A N-Channel Silicon MOSFET 2SK3120 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. Package Dimensions unit:mm 2062A [2S

Ordering number:ENN6104A N-Channel Silicon MOSFET 2SK3121 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. Package Dimensions unit:mm 2062A [

Ordering number:ENN6105A N-Channel Silicon MOSFET 2SK3122 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. Package Dimensions unit:mm 2062A [2S

Power F-MOS FETs 2SK3124 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q No secondary breakdown q High electrostatic breakdown voltage 6.5±0.1 5.3

2SK3126 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK3126 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.48 Ω (typ.) z High forward