डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK3082 | N-Channel MOSFET 2SK3082(L),2SK3082(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-637 (Z) 2nd. Edition May 1998 Features • Low on-resistance RDS(on) = 0.055 Ω typ. • High speed switching • 4V gate dri |
Hitachi Semiconductor |
|
2SK3082L | N-Channel MOSFET 2SK3082(L),2SK3082(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-637 (Z) 2nd. Edition May 1998 Features • Low on-resistance RDS(on) = 0.055 Ω typ. • High speed switching • 4V gate dri |
Hitachi Semiconductor |
|
2SK3082S | N-Channel MOSFET 2SK3082(L),2SK3082(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-637 (Z) 2nd. Edition May 1998 Features • Low on-resistance RDS(on) = 0.055 Ω typ. • High speed switching • 4V gate dri |
Hitachi Semiconductor |
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