डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK308 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK308
FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage
: VDSS= 120V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.3Ω(Max) @ VGS= 10V ·100% avalan |
Inchange Semiconductor |
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2SK308 | Silicon N-Channel MOSFET OEM: Hitachi
MOSFET Transistor 2SK308 / K308
Datasheet
Datasheet Rev. 2.0 – 09/19 – data without warranty / liability
OEM: Hitachi
MOSFET Transistor 2SK308 / K308
Datasheet
Datasheet Rev. 2.0 – 09/ |
Hitachi |
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2SK3080 | N-Channel MOSFET 2SK3080
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-635A (Z) 2nd. Edition May 1998 Features
• Low on-resistance R DS(on) = 20 mΩ typ. (V GS = 10V, ID = 15 A) • 4V gate drive devices. � |
Hitachi Semiconductor |
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2SK3081 | N-Channel MOSFET 2SK3081
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-636A (Z) 3rd. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 10mΩ typ. • 4V gate drive devices. • High speed switching
Ou |
Hitachi Semiconductor |
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2SK3082 | N-Channel MOSFET 2SK3082(L),2SK3082(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-637 (Z) 2nd. Edition May 1998 Features • Low on-resistance RDS(on) = 0.055 Ω typ. • High speed switching • 4V gate dri |
Hitachi Semiconductor |
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2SK3082L | N-Channel MOSFET 2SK3082(L),2SK3082(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-637 (Z) 2nd. Edition May 1998 Features • Low on-resistance RDS(on) = 0.055 Ω typ. • High speed switching • 4V gate dri |
Hitachi Semiconductor |
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2SK3082S | N-Channel MOSFET 2SK3082(L),2SK3082(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-637 (Z) 2nd. Edition May 1998 Features • Low on-resistance RDS(on) = 0.055 Ω typ. • High speed switching • 4V gate dri |
Hitachi Semiconductor |
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