डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK3077 | N-Channel MOSFET www.DataSheet4U.com
2SK3077
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
2SK3077
900 MHz BAND AMPLIFIER APPLICATIONS (GSM)
Unit: mm l Output Power l Gain l Drain Efficiency : PO = 15.0 dBmW (Min |
Toshiba Semiconductor |
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2SK3077A | N-Channel MOSFET www.DataSheet4U.com
2SK3077A
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK3077A
VHF/UHF Band Amplifier Applications
Unit: mm Output power: Po ≥ 20.5dBmW Gain: Gp ≥ 10.5dB Drain Efficiency |
Toshiba Semiconductor |
www.DataSheet.in | 2017 | संपर्क |