डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK3001 | GaAs HEMT Low Noise Amplifier 2SK3001
GaAs HEMT Low Noise Amplifier
www.DataSheet4U.com
ADE-208-597(Z) 1st. Edition December 1997 Features
• Excellent low noise characteristics. Fmin = 0.8 dB typ. (3 V, 5 mA, 0.9 GHz) • High associate |
Hitachi Semiconductor |
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2SK300 | N-Channel Silicon MOSFET | Sony Corporation |
|
2SK3003 | N-Channel MOSFET | INCHANGE |
|
2SK3004 | MOSFET | ETC |
|
2SK3000 | Silicon N Channel MOS FET | Renesas Technology |
|
2SK3001 | GaAs HEMT Low Noise Amplifier | Hitachi Semiconductor |
|
2SK3000 | Silicon N Channel MOS FET | Hitachi Semiconductor |
|
2SK3009 | VX-2 Series Power MOSFET | Shindengen Electric Mfg.Co.Ltd |
|
2SK3003 | MOSFET | Sanken |
|
2SK3004 | N-Channel MOSFET | INCHANGE |
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