डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK300 | N-Channel Silicon MOSFET www.DataSheet4U.com
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Sony Corporation |
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2SK3000 | Silicon N Channel MOS FET 2SK3000
Silicon N Channel MOS FET Low Frequency Power Switching
ADE-208-585 (Z) 1st. Edition December 1997 Features
• Low on-resistance R DS(on) = 0. 25Ω typ. (V GS = 10 V, ID = 450 mA) • 4V gate drive d |
Hitachi Semiconductor |
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2SK3000 | Silicon N Channel MOS FET 2SK3000
Silicon N Channel MOS FET Low Frequency Power Switching
REJ03G0379-0300Z (Previous ADE-208-585A (Z)) Rev.3.00 Jun.15.2004
Features
www.DataSheet4U.com R
• Low on-resistance DS(on) = 0.16 Ω typ. |
Renesas Technology |
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2SK3001 | GaAs HEMT Low Noise Amplifier 2SK3001
GaAs HEMT Low Noise Amplifier
www.DataSheet4U.com
ADE-208-597(Z) 1st. Edition December 1997 Features
• Excellent low noise characteristics. Fmin = 0.8 dB typ. (3 V, 5 mA, 0.9 GHz) • High associate |
Hitachi Semiconductor |
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2SK3003 | MOSFET 2SK3003
External dimensions 1 ...... FM20
Absolute Maximum Ratings (Ta = 25ºC)
Symbol
Ratings
Unit
VDSS
200
V
VGSS
±20
V
ID
±18
A
* ID (pulse) 1
±72
A
PD
35 (Tc = 25ºC)
W
EAS *2
120
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Sanken |
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2SK3003 | N-Channel MOSFET isc N-Channel MOSFET Transistor
2SK3003
FEATURES ·Drain Current –ID= 18A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.175Ω(Max) ·100% avalanche te |
INCHANGE |
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2SK3004 | MOSFET 2SK3004
External dimensions 1 ...... FM20
Absolute Maximum Ratings (Ta = 25ºC)
Symbol
Ratings
Unit
VDSS
250
V
VGSS
±20
V
ID
±18
A
* ID (pulse) 1
±72
A
PD
35 (Tc = 25ºC)
W
EAS *2
120
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ETC |
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