2SK2960 डाटा शीट PDF( Datasheet )

Power F-MOS FETs 2SK2960 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 250mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 55ns q No secondary breakdown un

isc N-Channel MOSFET Transistor 2SK2960 FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.52Ω(Max) @ VGS= 10V ·100% aval