2SK296 डाटा शीट PDF( Datasheet )

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Power F-MOS FETs 2SK2960 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 250mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 55ns q No secondary breakdown un

isc N-Channel MOSFET Transistor 2SK2960 FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.52Ω(Max) @ VGS= 10V ·100% aval

2SK2961 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2961 Relay Drive, Motor Drive and DC−DC Converter Application Unit: mm z Low drain−source ON resistance : RDS (ON) =

2SK2962 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2962 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source O

2SK2963 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-π-MOS V) 2SK2963 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm • 4 V gate drive • Low drain-source ON resistan

2SK2964 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSVI) 2SK2964 Chopper Regulators, DC−DC Converters and Motor DriveApplications z 4-V gate drive z Low drain-source ON-resistance