डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK2955 | Silicon N Channel MOS FET 2SK2955
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-564B (Z) 3rd. Edition Jun 1998 Features
• Low on-resistance R DS =0.010 Ω typ. • High speed switching • 4V gate drive device can be |
Hitachi Semiconductor |
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2SK2955 | Silicon N Channel MOS FET 2SK2955
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1055-0400 (Previous: ADE-208-564B) Rev.4.00 Sep 07, 2005
Features
• Low on-resistance RDS =0.010 Ω typ. • High speed switching • 4 V g |
Renesas |
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