2SK2927 डाटा शीट PDF( Datasheet )

2SK2927 Silicon N Channel MOS FET High Speed Power Switching ADE-208-550D (Z) 5th. Edition Jun 1998 Features • Low on-resistance R DS =0.055 Ω typ. • High speed switching • 4V gate drive device can be

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 75mΩ(Max) ·100% avalanche tested ·Minim