डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK2925 | Silicon N-Channel MOSFET 2SK2925(L),2SK2925(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-549C (Z) 4th. Edition Jun 1998 Features
• Low on-resistance R DS =0.060 Ω typ. • High speed switching • 4V gate drive |
Hitachi Semiconductor |
|
2SK2925 | Silicon N-Channel MOSFET 2SK2925(L),2SK2925(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS = 0.060 Ω typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source
Ou |
Renesas |
|
2SK2925L | Silicon N-Channel MOSFET 2SK2925(L),2SK2925(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-549C (Z) 4th. Edition Jun 1998 Features
• Low on-resistance R DS =0.060 Ω typ. • High speed switching • 4V gate drive |
Hitachi Semiconductor |
|
2SK2925L | Silicon N-Channel MOSFET 2SK2925(L),2SK2925(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS = 0.060 Ω typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source
Ou |
Renesas |
|
2SK2925S | Silicon N-Channel MOSFET 2SK2925(L),2SK2925(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-549C (Z) 4th. Edition Jun 1998 Features
• Low on-resistance R DS =0.060 Ω typ. • High speed switching • 4V gate drive |
Hitachi Semiconductor |
|
2SK2925S | N-Channel Silicon MOSFET www.DataSheet.co.kr
SMD Type
N-Channel Silicon MOSFET 2SK2925S
IC MOSFET
Features
Low on-resistance RDS =0.060 typ.
+0.15 6.50-0.15 +0.2 5.30-0.2
TO-252
+0.15 1.50-0.15
+0.1 2.30-0.1 +0.8 0.50-0.7
Unit: mm |
Guangdong Kexin Industrial |
|
2SK2925S | Silicon N-Channel MOSFET 2SK2925(L),2SK2925(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS = 0.060 Ω typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source
Ou |
Renesas |
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