डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK2922 | Silicon N Channel MOS FET 2SK2922
Silicon N Channel MOS FET UHF Power Amplifier
ADE-208-675(Z) 1st. Edition Aug. 1998 Features
• High power output, High gain, High efficiency PG = 8.0dB, Pout = 31dBm, ηD = 57 %min. (f = 836.5MHz) � |
Hitachi Semiconductor |
|
2SK2920 | Silicon N-Channel MOS Type Field Effect Transistor | Toshiba Semiconductor |
|
2SK2926 | Silicon N Channel MOS FET | Hitachi Semiconductor |
|
2SK2925 | Silicon N-Channel MOSFET | Hitachi Semiconductor |
|
2SK2925S | Silicon N-Channel MOSFET | Hitachi Semiconductor |
|
2SK2927 | Silicon N-Channel MOSFET | Hitachi Semiconductor |
|
2SK2927 | N-Channel MOSFET | INCHANGE |
|
2SK2928 | Silicon N Channel MOS FET | Hitachi Semiconductor |
|
2SK2925L | Silicon N-Channel MOSFET | Hitachi Semiconductor |
|
2SK2928 | N-Channel MOSFET | Renesas |
|
2SK2922 | Silicon N Channel MOS FET | Hitachi Semiconductor |
www.DataSheet.in | 2017 | संपर्क |