2SK291 डाटा शीट PDF( Datasheet )

2SK291 Silicon N-Channel Junction FET Application Low frequency low noise amplifier Outline TO-92 (2) 1. Drain 2. Source 3. Gate 3 2 1 2SK291 Absolute Maximum Ratings (Ta = 25°C) Item Gate to drain voltage

Ordering number:ENN6313 N-Channel Silicon MOSFET 2SK2911 Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. Package Dimensions unit:mm 2091A [2

2SK2912(L), 2SK2912(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-495 1st. Edition Features • Low on-resistance R DS = 15 mΩ typ. • High speed switching • 4V gate drive device can be

2SK2912(L), 2SK2912(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-495 1st. Edition Features • Low on-resistance R DS = 15 mΩ typ. • High speed switching • 4V gate drive device can be

2SK2912(L), 2SK2912(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-495 1st. Edition Features • Low on-resistance R DS = 15 mΩ typ. • High speed switching • 4V gate drive device can be

2SK2914 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2914 Chopper Regulator, DC−DC Converter and Moter Drive Applications Unit: mm z Low drain−source ON resistance : RDS (ON)

2SK2915 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2915 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance