2SK2907-01 डाटा शीट PDF( Datasheet )

2SK2907-01 FAP-IIIB Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS-FET 60V 0,0078Ω ±100A 125W > Outline Drawing > Applications - M

2SK2907-01R N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET TO-3PF 15.5 ±0.3 ø3.2 ±0.2 5.5 ±0.2 9