डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK2765 | N-channel MOS-FET 2SK2765-01
FAP-IIS Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated
N-channel MOS-FET
800V
2Ω
|
Fuji Electric |
|
2SK2765-01 | N-channel MOS-FET 2SK2765-01
FAP-IIS Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated
N-channel MOS-FET
800V
2Ω
|
Fuji Electric |
|
2SK2765-01 | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
per |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |