2SK2736 डाटा शीट PDF( Datasheet )

2SK2736 Silicon N Channel DV–L MOS FET High Speed Power Switching ADE-208-544 1st. Edition Features • Low on-resistance R DS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A) • 4V gate drive devices. • High sp

2SK2736 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 20 mΩ typ. (VGS = 10 V, ID = 15 A) • 4 V gate drive devices. • High speed switching Outline REJ03G103