2SK2685 डाटा शीट PDF( Datasheet )

डेटा पत्रक ( Datasheet PDF )

भाग संख्या	विवरण	मैन्युफैक्चरर्स	PDF
2SK2685	GaAs HEMT 2SK2685 GaAs HEMT ADE-208-400 1st. Edition Application UHF low noise amplifier Features • Excellent low noise characteristics. Fmin = 0.83 dB Typ. (3 V, 10 mA, 2 GHz) • High associated gain. Ga = 17 dB T	Hitachi Semiconductor	PDF
2SK2688-01	N-channel MOS-FET	Fuji Electric	PDF
2SK2689-01MR	N-channel MOS-FET	Fuji Electric	PDF
2SK2685	GaAs HEMT	Hitachi Semiconductor	PDF
2SK2687-01	N-channel MOS-FET	Fuji Electric	PDF
2SK2684L	Silicon N Channel DV-L MOS FET	Hitachi Semiconductor	PDF
2SK2682LS	N-Channel Silicon MOSFET	Sanyo Semicon Device	PDF
2SK2684S	Silicon N Channel DV-L MOS FET	Hitachi Semiconductor	PDF
2SK2684	Silicon N Channel DV-L MOS FET	Hitachi Semiconductor	PDF

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