डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK2652 | N-Channel MOSFET isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
2SK2652
·FEATURES ·Drain Source Voltage-
: VDSS= 900V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 2.5Ω(Max) ·100% avalanche tested ·Minimum |
INCHANGE |
|
2SK2652-01 | N-channel MOS-FET 2SK2652-01
FAP-IIS Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated
N-channel MOS-FET
900V
2,5� |
Fuji Electric |
www.DataSheet.in | 2017 | संपर्क |