डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK2569 | Silicon N-Channel MOSFET 2SK2569
Silicon N-Channel MOS FET
ADE-208-384 1st. Edition
Application
Low frequency power switching
Features
• • • • Low on-resistance. R DS(on) = 2.6 max. (at V GS = 4 V, I D = 100mA) 2.5V gate dri |
Hitachi Semiconductor |
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2SK2569 | Silicon N-Channel MOSFET 2SK2569
Silicon N Channel MOS FET
REJ03G1018-0300 Rev.3.00 Dec 27, 2006
Application
High speed power switching
Features
• • • • Low on-resistance. RDS(on) = 2.6 Ω max. (at VGS = 4 V, ID = 100 mA) 2. |
Renesas |
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