2SK2529 डाटा शीट PDF( Datasheet )

2SK2529 Silicon N-Channel MOS FET ADE-208-356F 7th. Edition Application High speed power switching Features • • • • Low on-resistance R DS(on) = 7 mΩ typ. High speed switching 4 V gate drive device

2SK2529 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • RDS(on) = 7 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source