2SK247 डाटा शीट PDF( Datasheet )

2SK2473-01 FAP-II Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 300V 0,2Ω 20A 125W

2SK2471-01 FAP-II Series > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching R

SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type 2SK2475 (F12F50VX2) 500V 12A FEATURES •œ Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. •œ The static

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2476 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2476 is N-Channel MOS Field Effect Transistor designed for high voltage switching applicatio

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2477 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2477 is N-Channel MOS Field Effect Transistor designed for high voltage switching applicatio