डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK2467 | N-Channel MOSFET TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK2467
2SK2467
High-Power Amplifier Application
• High breakdown voltage: VDSS = 180 V • High forward transfer admittance: |Yfs| = 4.0 S (typ.)
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Toshiba Semiconductor |
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2SK2467-Y | N-Channel MOSFET |
Toshiba Semiconductor |
www.DataSheet.in | 2017 | संपर्क |