2SK242 डाटा शीट PDF( Datasheet )

Ordering number:EN695G N-Channel Junction Silicon FET 2SK242 Low-Frequency General-Purpose Amplifier Applications Features · Ultrasmall-sized package permitting 2SK242-applied sets to be made small and slim.

2SK2420 External dimensions 1 ...... FM20 Absolute Maximum Ratings (Ta = 25ºC) Symbol Ratings Unit VDSS 60 V VGSS ±20 V ID ±30 A * ID (pulse) 1 ±120 A PD 40 (Tc = 25ºC) W EAS *2 38 m

isc N-Channel MOSFET Transistor 2SK2420 FEATURES ·Drain Current –ID= 30A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 28mΩ(Max) ·100% avalanche teste

2SK2421 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 60 ± 20 ± 40 ± 160 40 (Tc = 25ºC) 60 40 150 –55 to +150 (Ta = 25ºC) External dimensions 1 ...... FM20 E

2SK1637, 2SK2422 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for swit

2SK2423 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching reg

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and r