2SK227 डाटा शीट PDF( Datasheet )

2SK2272-01R FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 900V 2,8Ω 5A 80W

Ordering number:ENN5047 N-Channel Silicon MOSFET 2SK2273 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. Package Dimensions unit:mm 2

2SK2274 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII·5) 2SK2274 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l Low drain−source ON resistance : RDS

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 700V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and r

www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2275 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2275 is N-channel Power MOS Field Effect Transistor designed for high v

Power F-MOS FETs 2SK2276 2SK2276 Silicon N-Channel MOS For switching 6.5±0.1 1.8±0.1 2.5±0.1 Unit : mm s Features q Low 5.3±0.1 4.35±0.1 3.0±0.1 ON-resistance RDS(on) switching q High-speed 0.2max