डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK222 | N-Channel Junction Silicon FET Ordering number:EN836G
N-Channel Junction Silicon FET
2SK222
Low-Frequency, Low Noise Amplifier Applications
Features
· Ultralow noise figure. · Large yfs. · Low gate leakage current.
Package Dimens |
Sanyo Semicon Device |
|
2SK2220 | Silicon N-Channel MOSFET 2SK2220, 2SK2221
Silicon N-Channel MOS FET
Application
Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352
Features
• • • • • • • High power gain Excellent frequency response Hi |
Hitachi Semiconductor |
|
2SK2220 | Silicon N-Channel MOSFET 2SK2220, 2SK2221
Silicon N Channel MOS FET
Application
Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352
Features
• High power gain • Excellent frequency response • High speed switching |
Renesas |
|
2SK2221 | Silicon N-Channel MOSFET 2SK2220, 2SK2221
Silicon N-Channel MOS FET
Application
Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352
Features
• • • • • • • High power gain Excellent frequency response Hi |
Hitachi Semiconductor |
|
2SK2221 | Silicon N-Channel MOSFET 2SK2220, 2SK2221
Silicon N Channel MOS FET
Application
Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352
Features
• High power gain • Excellent frequency response • High speed switching |
Renesas |
|
2SK2221 | N-Channel MOSFET isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
2SK2221
·FEATURES ·Drain Current ID= 8A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.3Ω(Max) |
INCHANGE |
|
2SK2222 | N-Channel Transistor |
ETC |
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