2SK212 डाटा शीट PDF( Datasheet )

Ordering number:EN661E N-Channel Junction Silicon FET 2SK212 FM Tuner Applications Features · Ideal for FM tuners in low-voltage radios, car radios, etc. · Small-sized package permitting 2SK212-applied sets

Silicon N Channel Junction FETs LH03 series of products interconvertible 2SK212 Xiaosheng D Symbol Applications For charge sensor, meter amplifier circuit, rheostat , chopper and gain controller for AGC, elec

Power F-MOS FETs 2SK2123 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 100mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 35ns q No secondary breakdown un

Power F-MOS FETs 2SK2124 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 130mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 60ns q No secondary breakdown un

Power F-MOS FETs 2SK2125 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 15.6mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 35ns q No secondary breakdown u

Power F-MOS FETs 2SK2126 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 100mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 40ns q No secondary breakdown un

Power F-MOS FETs 2SK2128 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 15mJ q VGSS = ±20V guaranteed q High-speed switching: tf = 35ns q No secondary breakdown uni