डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK209 | N-Channel MOSFET |
Toshiba Semiconductor |
|
2SK2090 | N-Channel MOS FET DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2090
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The 2SK2090 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 2.5 V and it is not nec |
NEC |
|
2SK2091 | N-Channel MOSFET |
Sanyo Semicon Device |
|
2SK2094 | Small switching Transistors Transistors
Small switching (60V, 2A)
2SK2094
FFeatures 1) Low on-resistance. 2) Fast switchig speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to |
Rohm |
|
2SK2095N | Small switching Transistors Transistors
Small switching (60V, 10A)
2SK2095N
FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Easily designed drive circuits. 5) Low VGS(th). 6) Easy to paralle |
Rohm |
|
2SK2096 | Silicon N-Channel MOSFET 2SK2096
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V |
Hitachi Semiconductor |
|
2SK2096 | Silicon N-Channel MOSFET 2SK2096
Silicon N Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source � |
Renesas |
www.DataSheet.in | 2017 | संपर्क |