डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK2082-01 | N-channel MOS-FET 2SK2082-01
FAP-IIA Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof
N-channel MOS-FET
900V
1,4Ω
9A
150W |
Fuji Electric |
|
2SK2082-01 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK2082-01
DESCRIPTION ·Drain Current ID= 9A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
perfo |
Inchange Semiconductor |
www.DataSheet.in | 2017 | संपर्क |