डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK184 | N-Channel Silicon MOSFET TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK184
2SK184
Low Noise Audio Amplifier Applications
Unit: mm
· High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) · High breakdown volt |
Toshiba Semiconductor |
|
2SK1840 | N-Channel Enhancement Silicon MOSFET Ordering number:EN4635
N-Channel Enhancement Silicon MOSFET
2SK1840
Analog Switch Applications
Features
· Largeyfs. · Enhancement type.
· Low ON resistance.
Package Dimensions
unit:mm 2024B
[2SK1840 |
Sanyo Semicon Device |
|
2SK1841 | N-Channel Enhancement Silicon MOSFET Ordering number:EN4636
N-Channel Enhancement Silicon MOSFET
2SK1841
Ultrahigh-Speed Switching, Analog Switch Applications
Features
· Largeyfs. · Enhancement type.
· Low ON resistance.
Package Dimens |
Sanyo Semicon Device |
|
2SK1842 | Silicon N-Channel Junction FET Silicon Junction FETs (Small Signal)
2SK1842
Silicon N-Channel Junction FET
For impedance conversion in low frequency For infrared sensor
0.65±0.15
+0.2
unit: mm
0.65±0.15
2.8 –0.3
1.5 –0.05
+0.25
s |
Panasonic Semiconductor |
|
2SK1846 | Silicon N-Channel Power F-MOS FET Power F-MOS FETs
2SK1846
Silicon N-Channel Power F-MOS FET
s Features q Avalanche energy capacity guaranteed: EAS > 20mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 35ns q No secondary breakdown
s Ap |
Panasonic |
|
2SK1847 | N-Channel Silicon MOSFET Ordering number:EN4505
N-Channel Silicon MOSFET
2SK1847
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.
Package Dimensions
unit:mm 20 |
Sanyo Semicon Device |
|
2SK1848 | N-Channel Silicon MOSFET Ordering number:EN4500
N-Channel Silicon MOSFET
2SK1848
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.
Package Dimensions
unit:mm 20 |
Sanyo Semicon Device |
www.DataSheet.in | 2017 | संपर्क |