2SK1834 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage : VDSS=800V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and rel

Power F-MOS FETs 2SK1834 Silicon N-Channel Power F-MOS s Features q Avalanche energy capability guaranteed : EAS > 15mJ q VGSS=±30V guaranteed q High-speed switching : tf = 25ns q No secondary breakdown s A