2SK183 डाटा शीट PDF( Datasheet )

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1830 High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • Low threshold voltage: Vth = 0.5 to 1.5 V • High speed

2SK1831, 2SK1832 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for swit

2SK1831, 2SK1832 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for swit

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 2.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and

Power F-MOS FETs 2SK1833 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 90mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 30ns q No secondary breakdown s Ap

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage : VDSS=800V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and rel