2SK1821 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| 2SK1821 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage
: VDSS=600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and rel |
 Inchange Semiconductor |
|
| 2SK1821-01M | N-channel MOS-FET 2SK1821-01M
FAP-IIA Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof
N-channel MOS-FET
600V
6,5Ω
2A
30W |
 Fuji Electric |
|
| 2SK1821-01MR | N-channel MOS-FET 2SK1821-01MR
FAP-IIA Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof
N-channel MOS-FET
600V
6,5Ω
2A
30 |
Fuji Electric |
शेयर लिंक :
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www.DataSheet.in | 2017 | संपर्क |