2SK182 डाटा शीट PDF( Datasheet )

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage : VDSS=600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and rel

2SK1821-01M FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 600V 6,5Ω 2A 30W

2SK1821-01MR FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 600V 6,5Ω 2A 30

2SK1822-01M FAP-IIIA Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode N-channel MOS-FET 60V 0,0

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1824 N-CHANNEL MOS FET FOR SWITCHING The 2SK1824 is a N-channel vertical type MOS FET that is driven at 2.5 V. Because this MOS FET can be driven on a low voltage an