2SK180 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| 2SK180 | (2SK180 - 2SK183) Power FET www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
|
 Yoshino International |
|
| 2SK1803 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and |
 Inchange Semiconductor |
|
| 2SK1803 | Silicon N-Channel MOSFET Power F-MOS FETs
2SK1803
Silicon N-Channel Power F-MOS FET
s Features q Avalanche capacity guaranteed: EAS > 60mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 80ns q No secondary breakdown
s Applicati |
 Panasonic |
|
| 2SK1805 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK1805
DESCRIPTION ·Drain Current ID= 7A@ TC=25℃ ·Drain Source Voltage
: VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performan |
Inchange Semiconductor |
|
| 2SK1805 | Field Effect Transistor www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
|
 Toshiba |
|
| 2SK1807 | N-Channel MOSFET 2SK1807
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregu |
 Hitachi Semiconductor |
|
| 2SK1807 | Silicon N-Channel MOSFET 2SK1807
Silicon N Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regul |
 Renesas |
शेयर लिंक :
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www.DataSheet.in | 2017 | संपर्क |