2SK176 डाटा शीट PDF( Datasheet )

2SK1761 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregu

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2SK1761 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregu

2SK1762 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregu

2SK1762 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regul

2SK1764 Silicon N-Channel MOS FET Application Low frequency amplifier High speed switching Features • • • • Low on-resistance High speed switching 4 V Gate drive device can be driven from 5 V source S

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and r