डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK170 | Silicon N-Channel MOSFET TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK170
2SK170
Low Noise Audio Amplifier Applications
Unit: mm
• Recommended for first stages of EQ and M.C. head amplifiers. • High |Yfs|: |
Toshiba Semiconductor |
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2SK1700 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK1700
DESCRIPTION ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 450V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable ope |
Inchange Semiconductor |
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2SK1701 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK1701
DESCRIPTION ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 450V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable ope |
Inchange Semiconductor |
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2SK1703 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK1703
DESCRIPTION ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage-
: VDSS=500V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable oper |
Inchange Semiconductor |
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2SK1704 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK1704
DESCRIPTION ·Drain Current ID= 5A@ TC=25℃ ·Drain Source Voltage
: VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performan |
Inchange Semiconductor |
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2SK1705 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current ID= 10A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and |
Inchange Semiconductor |
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2SK1706 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current ID= 8A@ TC=25℃ ·Drain Source Voltage
: VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and re |
Inchange Semiconductor |
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