डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK1629 | Silicon N-Channel MOSFET 2SK1628, 2SK1629
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for swit |
Hitachi Semiconductor |
|
2SK1629 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK1629
ESCRIPTION ·Drain Current –ID=30A@ TC=25℃ ·Drain Source Voltage-
: VDSS=500 (Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable opera |
Inchange Semiconductor |
|
2SK1629-E1-E | MOSFET 2SK1629-E1-E
500V - 30A - MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 0.22 Ω typ. (at ID = 15 A, VGS = 10 V, Ta = 25°C)
• High speed switching • Low drive current • Sui |
Renesas |
www.DataSheet.in | 2017 | संपर्क |