डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK1606 | Field Effect Transistors Power F-MOS FETs
2SK1606
www.DataSheet4U.com Silicon N-Channel Power F-MOS FET
s Features
q High avalanche energy capacity q VGSS: 30V guaranteed q Low RDS(on), high-speed switching characteristic
unit: mm
0. |
Panasonic |
|
2SK1606 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK1606
DESCRIPTION ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage-
: VDSS=450V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable opera |
Inchange Semiconductor |
www.DataSheet.in | 2017 | संपर्क |