डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK160 | N-Channel FET |
NEC |
|
2SK1600 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage-
: VDSS=800V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
AP |
Inchange Semiconductor |
|
2SK1600 | Silicon N-Channel MOSFET www.DataSheet4U.com
|
Toshiba Semiconductor |
|
2SK1601 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage-
: VDSS=900V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
AP |
Inchange Semiconductor |
|
2SK1602 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID= 2.8A@ TC=25℃ ·Drain Source Voltage-
: VDSS=800V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
|
Inchange Semiconductor |
|
2SK1602 | Silicon N-Channel MOSFET www.DataSheet4U.com
|
Toshiba Semiconductor |
|
2SK1603 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID= 2.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS=900V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
|
Inchange Semiconductor |
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