No. | Partie # | Fabricant | Description | Fiche Technique |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Sourc |
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Toshiba Semiconductor |
N-Channel MOSFET |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Sourc |
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Hitachi Semiconductor |
Silicon N-Channel MOSFET • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Sourc |
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