| No. | Partie # | Fabricant | Description | Fiche Technique |
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Inchange Semiconductor |
N-Channel MOSFET Transistor 0; ID= 10mA VGS(th) Gate Threshold Voltage VDS=10 V; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=3A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=600V; VGS= 0 VSD Forward On-Volt |
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ETC |
2SK1213 |
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