डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK121 | Silicon N Channel Junction FET |
Sony |
|
2SK1211 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK1211
DESCRIPTION ·Drain Current –ID=2.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS=800V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable ope |
Inchange Semiconductor |
|
2SK1212 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK1212
DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage-
: VDSS=900V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
perform |
Inchange Semiconductor |
|
2SK1212-01 | N-CHANNEL SILICON POWER MOS-FET |
Fuji |
|
2SK1212-01R | N-CHANNEL SILICON POWER MOS-FET |
Fuji |
|
2SK1213 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID=6A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and |
Inchange Semiconductor |
|
2SK1214 | N-CHANNEL SILICON POWER F-MOS FET |
Fuji |
www.DataSheet.in | 2017 | संपर्क |