डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK12 | (2SK11x) N-CHANNEL JFET TRANSISTOR |
Toshiba |
|
2SK1200 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK1200
DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
perfo |
Inchange Semiconductor |
|
2SK1201 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance an |
Inchange Semiconductor |
|
2SK1202 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance an |
Inchange Semiconductor |
|
2SK1203 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance an |
Inchange Semiconductor |
|
2SK1204 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance an |
Inchange Semiconductor |
|
2SK1204 | Silicon N-Channel MOS FET |
Hitachi Semiconductor |
www.DataSheet.in | 2017 | संपर्क |