2SK118 डाटा शीट PDF( Datasheet )

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK118 General Purpose and Impedance Converter and Condenser Microphone Applications 2SK118 Unit: mm • High breakdown voltage: VGDS = −50 V

2SK1180 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) PD EAS Tch Tstg Ratings 500 ± 20 ± 10 ± 40 (Tch 150ºC) (Ta = 25ºC) External dimensions 2 ...... FM100 Electrical Characteristics Symbol V(BR

isc N-Channel MOSFET Transistor 2SK1180 DESCRIPTION ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variation

2SK1181 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) PD EAS * Tch Tstg Ratings 500 ± 20 ± 13 ± 52 (Tch 150ºC) (Ta = 25ºC) External dimensions 2 ...... FM100 Electrical Characteristics Symbol V(

2SK1183 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) PD EAS * Tch Tstg Ratings 200 ± 20 ±3 ± 12 (Tch 150ºC) (Ta = 25ºC) External dimensions 1 ...... FM20 Electrical Characteristics Symbol V(BR)

2SK1184 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) PD EAS Tch Tstg Ratings 200 ± 20 ±5 ± 20 (Tch 150ºC) (Ta = 25ºC) External dimensions 1 ...... FM20 Electrical Characteristics Symbol V(BR) D

2SK1185 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) PD EAS Tch Tstg Ratings 100 ± 20 ±5 ± 20 (Tch 150ºC) (Ta = 25ºC) External dimensions 1 ...... FM20 Electrical Characteristics Symbol V(BR) D