2SK1167 डाटा शीट PDF( Datasheet )

2SK1167, 2SK1168 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for swit

2SK1167, 2SK1168 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switch

isc N-Channel MOSFET Transistor 2SK1167 ·FEATURES ·With TO-3PN packaging ·Low drain-source on-resistance: RDS(ON) =0.36Ω (MAX) ·Enhancement mode: Vth = 3.0 to 4.0V (VDS = 10 V, ID=1mA) ·100% avalanche