2SJ598 डाटा शीट PDF( Datasheet )

isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤130mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and r

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ598 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ598 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on

SMD Type MOS Field Effect Transistor www.datasheet4u.com IC MOSFET 2SJ598 TO-252 +0.15 1.50-0.15 Features Low on-resistance RDS(on)1 = 130 m RDS(on)2 = 190 m MAX. (VGS =-10 V, ID = -6 A) MAX. (VGS = -4.0 V,

SMD Type MOSFET P-Channel MOSFET 2SJ598-Z ■ Features ● VDS (V) =-60V ● ID =-12 A ● RDS(ON) ＜ 130m Ω (VGS =-10V) ● RDS(ON) ＜ 190mΩ (VGS =-4V) ● Low Ciss: Ciss = 720 pF (TYP.) Gate Drain Bo