2SJ529 डाटा शीट PDF( Datasheet )

2SJ529(L),2SJ529(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-654A (Z) 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.12 Ω typ. • 4 V gete drive devices • High speed

2SJ529(L),2SJ529(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-654A (Z) 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.12 Ω typ. • 4 V gete drive devices • High speed

2SJ529(L),2SJ529(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-654A (Z) 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.12 Ω typ. • 4 V gete drive devices • High speed

isc P-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operat