डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SJ527 | P-Channel MOSFET 2SJ527(L), 2SJ527(S)
Silicon P Channel MOS FET
Description
High speed power switching
REJ03G0877-0300 (Previous: ADE-208-640A)
Rev.3.00 Sep 07, 2005
Features
• Low on-resistance RDS (on) = 0.3 Ω typ.
• |
Renesas |
|
2SJ527 | P-Channel MOSFET 2SJ527(L),2SJ527(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-640A (Z) 2nd. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0.3 Ω typ. • Low drive current • 4 V gete drive d |
Hitachi Semiconductor |
|
2SJ527L | P-Channel MOSFET 2SJ527(L),2SJ527(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-640A (Z) 2nd. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0.3 Ω typ. • Low drive current • 4 V gete drive d |
Hitachi Semiconductor |
|
2SJ527L | P-Channel MOSFET 2SJ527(L), 2SJ527(S)
Silicon P Channel MOS FET
Description
High speed power switching
REJ03G0877-0300 (Previous: ADE-208-640A)
Rev.3.00 Sep 07, 2005
Features
• Low on-resistance RDS (on) = 0.3 Ω typ.
• |
Renesas |
|
2SJ527S | P-Channel MOSFET 2SJ527(L),2SJ527(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-640A (Z) 2nd. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0.3 Ω typ. • Low drive current • 4 V gete drive d |
Hitachi Semiconductor |
|
2SJ527S | P-Channel MOSFET 2SJ527(L), 2SJ527(S)
Silicon P Channel MOS FET
Description
High speed power switching
REJ03G0877-0300 (Previous: ADE-208-640A)
Rev.3.00 Sep 07, 2005
Features
• Low on-resistance RDS (on) = 0.3 Ω typ.
• |
Renesas |
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